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Cambios a Paso #15

Editado por Nat Welch

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Líneas de Paso

[* black] A shot of the logic board minus the steel EMI shield.
[* black] The manufacturer of the memory has switched from Toshiba on the FCC teardown to Samsung on this device.
[* black] NAND memory L =64Gbit MLC DDP CG = 64 Gbit 08 = 8x U = 2.7V~3.6V 1 = Dual nCE & Dual R/nB M = 1st GenNAND flash.
[* black] We love how much easier Samsung's chip numbers are to interpret
.
[* black] NAND memory L =64Gbit MLC DDP CG = 64 Gbit 08 = 8x U = 2.7V~3.6V 1 = Dual nCE & Dual R/nB M = 1st GenNAND flash.
[* black] We love how much easier Samsung's chip numbers are to interpret
.
[* black] Broadcom BCM5973.
[* black] The Apple A4, is marked up much nicer than the part in [http://s1.guide-images.ifixit.com/igi/V6QetUKjFdDsDYga|the FCC photos] from yesterday.
[* black] Texas Instruments CD3240A1